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The fundamental principle involves measuring the voltage drop across these resistors when biased with a constant current or using them within a Wheatstone bridge configuration. Advantages over Traditional BJT Sensors
For decades, the "Proportional to Absolute Temperature" (PTAT) voltage generated by BJTs was the industry standard. However, resistor-based sensors offer several distinct advantages in the nanometer CMOS era:
In conclusion, resistor-based temperature sensors represent a vital evolution in CMOS design. By trading off raw, uncalibrated precision for lower power, smaller area, and better scalability, they provide the thermal intelligence necessary for the next generation of smart devices.
These utilize the doped regions of the silicon substrate. They often exhibit a higher TCR but are more susceptible to noise and substrate interference.
Resistor-based oscillators (where the frequency is modulated by resistance changes) allow for direct time-to-digital conversion, simplifying the analog-to-digital interface. Challenges and Trade-offs
High-ohmic polysilicon resistors can be fabricated in a smaller footprint than the multi-transistor arrays required for high-accuracy BJT sensing.
Utilizing the back-end-of-line (BEOL) metal layers provides a very stable, albeit lower, TCR, making them useful for specific high-stability requirements.
